Method of distortion compensation by irradiation of adaptive lithography membrane masks

ABSTRACT

Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer. In another embodiment, a reference pattern is formed on the membrane as a means of measuring mask distortion, and the heat input distribution needed to correct distortion is determined by subsequent measurements of the reference pattern. In this alternative embodiment, any source of distortion in the mask may be corrected.

This invention pertains to apparatus and methods for compensatingdistortions in membrane lithography masks, wafers, or both.

The size of circuit elements used in state-of-the-art integratedcircuits continues to decrease. New lithography techniques will beneeded to continue this reduction to sizes much smaller than thosecurrently in use. Proximity X-ray lithography is a particularlypromising technique, as it allows the largest exposure field of any ofthe contenders for the next generation of integrated circuitlithography, on the order of 5 cm×5 cm in a single exposure. The largeexposure field provides a significant throughput advantage, but it alsomakes image placement more critical, to the point where accurate imageplacement is widely regarded as a major factor limiting the use of X-raylithography in very large scale integrated (“VLSI”) circuits. Overlayerrors in proximity X-ray lithography may arise from several factors,including for example the following: (1) errors in the pattern writingtool; (2) distortions in the membrane mask caused, for example, bystresses in the absorber; and (3) distortions that are already presentin the pattern on the wafer. Much effort has gone into minimizing allthree effects, as well as at least partially compensating them byadjusting the magnification.

The industry's response to this critical problem has typically been todesign masks that are as rigid as possible, to try to minimize onepotential cause of distortion at its source. While other types of masksare inherently more rigid, the inherent rigidity of membrane masks isrelatively low. The rigidity of membrane masks has been increased, forexample, by the use of diamond substrates. Membrane masks are currentlyrequired for X-ray lithography, ion beam lithography, and some types ofe-beam lithographies. Although membrane masks may in principle be usedin almost all lithography techniques, they have generally beenconsidered less desirable. One approach in a projection electron beamsystem (the so-called SCALPEL system) has been to reinforce the requiredmembrane masks with “grillage” to increase their rigidity.

The type of “membrane mask” used in X-ray lithography comprises amembrane and an absorber. The membrane is a continuous sheet that isrelatively transparent to the radiation used to expose a resist on awafer. The main function of the membrane is to support the absorber. Theabsorber, which adheres to the membrane, is relatively opaque to theradiation. The absorber is patterned to correspond with the patterndesired in the exposed and developed resist on the wafer, and need notbe continuous since it adheres to the membrane.

In other lithographies, other types of membrane masks have been used.For example, the membrane may be opaque to the radiation, except whereholes are placed in the membrane (so-called “stencil” masks).Alternatively, the absorber may be replaced by a patterned layer thatscatters incident radiation instead of absorbing it.

Generally, the industry has addressed the problem of distortion bytrying to manufacture masks that are as accurate as possible,considering the ideal to be features positioned on orthogonal, perfectlylinear axes. Much of the cost of mask-patterning tools lies in thereferences, metrology, and feedback used to enhance accurate imageplacement. However, this approach cannot accommodate changes in a maskthat occur in processing steps subsequent to resist exposure, noraccommodate changes that occur as a mask ages, nor match a mask todistortions that may exist on the wafer being exposed.

A technique called “pattern-specific emulation” has been used tocompensate for distortion in X-ray masks, such as distortion caused inetching the absorber. In this method a “send ahead” mask is first made,and is then used to expose a level on a wafer. Pattern displacementsfrom the desired positions are noted, and are fed back to themask-writing tool. A new mask is then written incorporating thesedisplacements. Although time consuming and costly, this method didimprove overlay. See, e.g., A. Fisher et al., “Pattern transfer on maskmembranes,” J. Vac. Sci. Technol. B, vol. 16, pp. 3572-3576 (1998).

R. L. Engelstad and F. Cerrina of the University of Wisconsin haveconsidered the displacement of features on a membrane mask by heated gasjets (private communication).

Magnification correction is considered one of the critical issues inlithography. In some lithographic techniques, magnification correctionhas been accomplished by an adjustment of the exposure tool. Forexample, in projection optical lithography it is routine to adjust themagnification by axial displacement of the reticle and refocusing in aprojection system which is non-telecentric on the reticle side.Similarly, adjusting the gap in point-source X-ray lithography changesthe magnification. Adjusting magnification is more difficult instorage-ring X-ray lithography.

It has also been proposed to correct for magnification errors byexpanding or contracting either the mask or the wafer. Both mechanicaland thermal means have been suggested for correcting magnificationerrors.

U.S. Pat. No. 5,155,749 discloses expansion of an X-ray membrane mask byheating a support ring to facilitate magnification matching between themask and the wafer.

A method has been proposed to correct magnification errors by preheatingthe wafer, and then vacuum-chucking it so that its size is “frozen in”by the chucking force when the wafer is cooled back down. See H. Aoyamaet al., “Magnification correction by changing wafer temperature inproximity X-ray lithography,” J. Vac. Sci. TechnoL B, vol. 17, pp.3411-3414 (1999).

U.S. Pat. No. 5,504,793 discloses a method for applying torque to anX-ray mask at several locations around its edge with mechanicalactuators, to stretch or compress the mask membrane to providemagnification correction.

It has been proposed to mount the wafer on a spherical vacuum chuck, andto adjust the size of the front surface by changing the radius of thechuck via application of an internal pressure or vacuum. See M. Feldmanet al., “Wafer chuck for magnification correction in X-ray lithography,”J. Vac. Sci. Technol. B, vol. 16, pp. 3476-3479 (1998).

A novel method has been discovered, called the adaptive membrane masktechnique, for locally heating the membrane in a lithographic mask tocompensate for distortion in the mask, the wafer, or both. Thistechnique may be used both to shrink and to expand areas of the mask, inorder to adjust for varying magnitudes and signs of distortion. Theadaptive membrane mask represents a major change in philosophy, fromincreasingly costly and difficult “dead reckoning” methods to one usingfeedback.

In one embodiment, the correction method comprises two steps: (1) Asend-ahead wafer is exposed and measured by conventional means todetermine the overlay errors at several points throughout the field. Theerrors may be the result of distortion in the mask, in the wafer, orboth. (2) During exposure of subsequent wafers, calibrated beams oflight are focused on the mask. The source of light may be, for example,a modulated laser beam, a halogen lamp, a capillary lamp, or a cathoderay tube. The light could have wavelengths from infrared to visible toultraviolet. The light may be scanned across the mask, or projected onthe mask directly or through a transparency or liquid crystal array, orproduced by another projection system. The heating from the absorbedlight produces displacements that compensate for the overlay errorsmeasured with the send-ahead wafer. While heating a portion of a maskcauses it to expand, a portion of a mask may also effectively be shrunkby heating the areas surrounding it.

In some circumstances, an alternative embodiment may be preferred. Thereis a delay inherent in the send-ahead wafer technique, due to the timerequired to develop the wafer, to measure its distortions, and toprepare a suitable transparency (if a transparency is used). The cost ofthe “down time” for a lithography exposure tool, for example one on asynchrotron X-ray source, can be significant. In such a case, analternative embodiment may be used to essentially eliminate such “downtime,” thereby reducing costs. Prior to using the exposure tool,distortions in the mask are measured off-line, and optionally thedistortions in the wafer may be measured off-line as well. Based on theoff-line measured distortions, the required compensations are calculatedin advance, so that no time is lost while using the exposure tool itself

The novel compensation method allows any source of distortion to becorrected—for example, distortion appearing in the mask as manufactured,distortion that only develops in the mask over time, or distortion inthe wafer—in the latter case, particularly systematic distortions thatare repeated from one wafer to the next.

This compensation method is simplified in the particular case of ascanned exposure using X-rays from an electron storage ring, since atany given time a correction need only be applied in the immediatevicinity of the line currently exposed by the X-ray beam. Two lightbeams may be used, one forming a line image just above, and one justbelow the X-ray beam. FIG. 1 illustrates one embodiment in accordancewith the present invention in a storage ring beam line. The transparencypartially transmits the light, and is scanned synchronously with themask and wafer. Preferably, the lamp is a line source perpendicular tothe plane of the paper. For clarity, only the beam forming a line imagebelow the X-ray beam is shown; in practice some of the components couldbe shared by the light beams both above and below the X-ray beam.Intensity differences between the two beams cause differential maskexpansion in the vertical direction, compensating vertical distortion,while intensity variations common to both beams compensate in thehorizontal distortion; see FIGS. 7(a), 7(b), and 7(c): (It is understoodthat the designations “horizontal” and “vertical” refer to a directionparallel to the line being exposed by the radiation, and a directionperpendicular to that line, respectively.)

The loads produced by localized heating of the mask may be used torestore the mask to an undistorted condition, or to match an existingdistortion pattern on the wafer. This ability gives membrane masks aflexibility that rigid masks lack. Instead of making the mask and theexposure tool as perfect and as fixed as possible, a task that israpidly becoming a critical technical barrier to nanoscale and VLSIlithography, the adaptable mask in an image placement feedback system inprinciple allows the image placement accuracy to be made as good as theability to measure it.

In another alternative embodiment, a mask may be fabricated and handledso that in use it is nearly free of distortion. This alternativeembodiment preferably employs the following sequence of steps: (1)forming a fiducial grid on the mask prior to the formation of themasking pattern, preferably by interferometric lithography, andpreferably in or on the membrane; (2) an optional step of characterizingthe fiducial grid prior to formation of the masking pattern, for exampleby means of a holographic-phase-shifting interferometer, such as thatshown for example in FIG. 8, and as otherwise described in M. Lim etal., J. Vac. Sci. Technol. B, vol. 17, pp. 2703-2706 (1999); and in K.Murooka et al., “Membrane-mask distortion correction: analytical andexperimental results,” paper to be presented at the InternationalConference on Electron, Ion, and Photo Beam Technology andNanofabrication (Palm Springs, Calif., May 30 to Jun. 2, 2000); (3)forming the masking pattern on the membrane, for example an X-rayabsorber pattern in the case of an X-ray mask; (4) measuring thefiducial grid again, for example with a holographic-phase-shiftinginterferometer, to determine the distribution of distortion associatedwith, or caused by, the masking pattern; (5) calculating the stressdistribution that produced the distortion distribution determined instep (4), and calculating from the stress distribution a heat-inputdistribution to compensate or correct the distortion distribution; and(6) applying the calculated heat input distribution to the mask.

Two techniques, an analytical method and a finite elements method, forcalculating a heat-input distribution to compensate or correct ameasured distortion distribution, are disclosed in (unpublished) pendingproposal to DARPA BAA 00-4 (prepared Feb. 8, 2000), a complete copy ofwhich is being submitted with this application as originally filed inthe United States Patent and Trademark Office, and the completedisclosure of which is hereby incorporated by reference.

An advantage of using such a fiducial grid and the associatedinterferometric means of measuring distortion of the fiducial grid isthat these measurements may be made while the mask is located in anexposure apparatus in preparation for exposure. Moreover, themeasurement can be performed while the heat input is being applied, andhence during the actual exposure, allowing active feedback to the heatinput.

FIG. 8 depicts a holographic phase-shifting interferometer that may beused in making these measurements. As compared to an interferometriclithography system such as is known in the art, the holographicphase-shifting interferometer has three primary modifications: (1) Afluorescent or non-fluorescent screen is placed in front of one pinholeto capture the interference pattern between the reflected andback-diffracted beams; (2) A piezoelectric transducer pushes thebeam-splitter, which in turn causes a phase shift in one of the arms;and (3) A CCD camera (not shown) is used to record the fringe patterns.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates one embodiment in accordance with the presentinvention in a storage ring beam line.

FIG. 2 illustrates schematically the experimental apparatus used formeasurements of thermal displacements on X-ray masks.

FIG. 3 illustrates in-plane thermal displacements observed at the centerof the boron nitride mask as a function of the location.

FIG. 4 depicts observed peak-to-peak displacements measured along thediameter of the boron nitride mask.

FIG. 5 shows the measured dependence of displacement on the gap for asilicon membrane mask.

FIG. 6 shows the measured dependence of displacement on the gap for asilicon carbide membrane mask.

FIGS. 7(a), 7(b), and 7(c) illustrate, respectively, light beams in thevicinity of an X-ray beam; intensity differences between the two lightbeams causing differential mask expansion in the vertical direction,compensating vertical distortion; and intensity variations common toboth light beams compensating horizontal distortion.

FIG. 8 depicts a holographic phase-shifting interferometer.

The light focused on the mask deposits heat, resulting in a temperaturedistribution T(X,Y) in the mask membrane, and hence in-planedisplacements in that membrane. The magnitude of these displacementsdepends on the location within the mask, the locations at which the heatis deposited, the gap between the mask and the wafer, and the materialproperties of the mask membrane, such as its coefficient of thermalexpansion and its Young's modulus.

Under the approximation of steady state conditions, the input heat isexactly balanced by heat lost from the mask. Neglecting heat flow in theplane of the mask, and assuming that the wafer is at a constanttemperature, much of the heat flow from the mask results from thermalconduction across the gap, at a rate inversely proportional to the gapdimension. We have $\begin{matrix}{{{Heat}\quad {Loss}}\quad \propto {\left( {\frac{C_{1}}{g} + C_{2}} \right)\delta \quad T}} & (1)\end{matrix}$

where g is the distance of the gap, δT=δT(X,Y) is the difference intemperature between the wafer and the mask, C₁ is proportional to theheat lost through the gap, and C₂ is proportional to the heat lost byall other mechanisms. Since the in-plane displacement is directlyproportional to the magnitude of the temperature distribution within themask, if δT=0 for at least one place on the mask, we may write$\begin{matrix}{{Displacement} = {\frac{p}{\frac{C_{1}}{g} + C_{2}}\quad = \frac{gp}{C_{1} + {C_{2}g}}}} & (2)\end{matrix}$

where p is the power (in the form of heat) deposited on the mask bylight.

Experimentally-determined values of C₁ and C₂ are given in Table 1 forthree particular masks: an AT&T-Bell Labs boron nitride mask that was 15years old at the time of the measurements, and more modern IBM siliconand silicon carbide masks.

TABLE I Properties of Masks Tested Manufacturer AT&T-Bell Labs IBM IBMMembrane Boron nitride Silicon Silicon carbide Membrane Thickness 8 μm 2μm 2 μm Absorber Gold Gold Tantalum silicide Absorber Thickness 0.7 μmNA 0.6 μm Absorber Coverage 100% 70% 10% Membrane Size 72 mm Diameter 40× 40 mm 26 × 33 Total Mask Thickness 5.7 mm 6.4 mm 7.6 mm Small GapSensitivity ±5 ±7 ±11 (nm/W/μm) Small Gap Sensitivity 0.7 1.75 3.3(ppm/W/10 μm air gap) C₁(W) 186 143 143 C₂(W/μm) 0.47 0.62 0.47

Measurements of thermal displacements on X-ray masks were performed on amicroscope with a 5×, 0.55 NA, ultra-long working distance objective(Olympus ULWD MS Plan 50×microscope objective, Olympus America Inc.,Melville, N.Y.). FIG. 2 illustrates schematically the experimentalapparatus used. The microscope was equipped with a video camera that hadbeen modified to provide approximately twice the nominal magnification.Measurements were made by viewing the video signal from the cameradirectly with an oscilloscope; the video sweep speed was calibrated at1.23 μm per μsec with a stage micrometer (Model F36121, EdmundScientific Company, Barrington, N.J.). The observed video rise time wasequivalent to approximately 0.6 μm, consistent with the nearlydiffraction-limited spatial resolution previously observed for themicroscope objective.

Masks were viewed either “face up” on an optical flat to provide arelatively large gap to the nearest cooling surface, or “face down” onthe optical flat to provide a relatively small gap. In the latter caseshims were used to adjust the gap, which was measured by focusing themicroscope alternately on the mask and on scratches on the optical flat.

The heating light beam was obtained from a 35 mm projector that had beenmodified by removing its condensing optics. The projection lens wasoperated at nearly unit magnification, at about ƒ/7, to form a 1 cmdiameter image of the projection lamp. The entire projector was mountedon an X-Y stage, pointing downward at a 30° angle, so that the focusedspot could be positioned throughout the mask surface, including the areadirectly under the objective. The area illuminated on the mask was a10×20 mm ellipse; measurements were made along the direction of the 10mm axis.

Mask displacements were generally measured at reduced voltage, withabout 0.31 Watts in the focused light spot. The displacements wereobserved to be proportional to power, and to be independent of thelamp's color temperature, up to full voltage, or about 0.45 Watts in thefocused spot. No out-of-plane displacements were observed, except at thelargest gaps.

In-plane thermal displacement measurements were made on a boron nitridemembrane X-ray mask, manufactured by AT&T-Bell Labs in 1984. FIG. 3illustrates the displacements observed at the center of the boronnitride mask as a function of the location of the 0.31 Watt heat input.The mask membrane was a circle 72 mm in diameter. The mask was placedface-up, to obtain an effective gap equal to the 5.7 mm thickness of themask rim. Measurements were made at the center of the mask while thefocused light spot was moved across a diameter. A maximum “peak-to-peak”displacement of approximately 3 μm was observed as the focused spottraversed from one side of the microscope objective to the other. Therelatively large displacements shown in FIG. 3 were attributed primarilyto the large gap between the mask and the optical flat.

The peak-to-peak displacement was also measured as a function of theposition of the focused light spot across a diameter of the mask. FIG. 4depicts observed peak-to-peak displacements measured along the diameterof the boron nitride mask, when irradiated by 0.31 Watts of heat nearthe point of observation. The mask was again measured with a 5.7 mm gapto the closest surface. The mask contained 14 test patterns, arranged 5mm apart from one another in a linear array, with the first and lastpatterns spaced 2.5 and 4.5 mm, respectively, from the edge of themembrane. Although the displacement was constrained to fall to zero atthe edge of the membrane, it rose rapidly away from the edge, and wasnearly constant over a large portion of the mask. Near the edge of themembrane, most of the peak-to-peak displacement arose from light thatfell between the microscope objective and the edge. This was true evenwhen only a portion of the light fell on the membrane. The results shownin FIG. 4 show that even a slightly oversized membrane should provideadequate correction capability at the edge of the field.

Since future X-ray exposures are likely to be performed at gaps lessthan 10 μm, the dependence of the displacement on the gap is important.FIGS. 5 and 6 show the measured gap dependence for an IBM siliconmembrane mask and an IBM silicon carbide (“Talon”) membrane mask,respectively. FIG. 5 illustrates the measured peak-to-peak displacementfor the IBM silicon membrane mask as a function of the gap. The solidcurve is two times equation (2), with C₁=143 W, C₂=0.62 W/μm, and p=0.31W. FIG. 6 illustrates the measured peak-to-peak displacement for the IBMsilicon carbide membrane mask as a function of the gap. The solid curveis two times equation (2), with C₁=143 W, C₂=0.47 W/μm, and p=0.31 W.Equation (2) provided a reasonable fit to the observed measurements forboth masks, as well as for the boron nitride mask, except for thesmallest gaps in the case of the silicon carbide mask, where Equation(2) underestimated the measured displacements by ˜35%. It wasinteresting that a given heat input produced the largest displacementsat small gaps on this particular mask.

At gaps of several millimeters, obtained with the masks “face up,” allthree masks were observed to approach thermal equilibrium with timeconstants on the order of one second. The theory behind Equation (2)predicted that the time constant should be proportional to thedisplacement. As expected, the time constant was too short to beobserved at the smallest gaps used in the experiments reported here.

These preliminary results demonstrated that introducing heat with afocused light beam can produce significant in-plane displacements inX-ray masks. This effect may be exploited with a send-ahead wafer tocompensate for virtually any distortions that do not vary too rapidly.The magnitude of the effect observed in the initial experiments with asilicon carbide mask, about ±110 nm, or 3.3 ppm, per Watt for a 10 μmgap in air, was well within the range needed to provide usefulcorrections over most of the exposure field; as were the comparablemagnitudes for boron nitride and silicon masks, ±50 nm per Watt and ±70nm per Watt, respectively. To further enhance the compensation that maybe achieved with this technique, the initial fabrication of the masksmay be optimized accordingly: for example, a somewhat oversized membranepermits corrections over the entire field, and also allows both positiveand negative magnification corrections. As another example, one coulddeposit on an X-ray membrane mask a low Z (low atomic mass) material orcomposite that: (1) comprises a substance that is highly absorbingoptically, such as carbon black or another black substance, and (2) hasa large coefficient of thermal expansion, and (3) does not degraderapidly when exposed to X-rays. Such a coating would improve the mask'ssensitivity to the novel compensation technique, without substantiallyaltering the mask's X-ray characteristics.

Preliminary theoretical calculations using finite-element analysis havebeen used to model the thermal deformations in a square-membrane mask.One result of the model, which agreed with the experimental datareported above, was that the sensitivity of the mask to a localizedthermal load was nearly constant over most of the surface of the mask,changing substantially only near the edges of the mask. This conclusionis important not only because it demonstrates nearly constantsensitivity, but also because it demonstrates the ability to correctmagnification errors with only a slightly oversized membrane.Magnification correction is thus a special case of the generalcorrection technique of the present invention.

Although this correction technique was originally developed for use withX-ray lithography, it is not limited to X-ray lithography, but may alsobe applied to lithography at other wavelengths and with particles otherthan photons, for example, visible wavelengths, ultraviolet, deepultraviolet, electron beams, or ion beams. Membrane masks havepreviously not been widely used in photon lithographies other than X-raylithography, because of the higher distortion that has typically beenseen as compared to that for more rigid masks. But the novel techniquefor correcting distortion will allow membrane masks to be more widelyused in lithographies where it has previously not found widespreadapplication. As just one of many examples, the novel adaptive masktechnique may be used to correct for variations between cameras inmulti-level lithography.

Other sources of heat, e.g., the X-ray beam itself, may also introducesome in-plane displacements, which can also be compensated byappropriately placed light beams carrying comparable power.

The initial experiments reported here were conducted in air. Exposure ina helium environment, as is typical in X-ray lithography, would reduceboth wanted and unwanted heat displacements as compared to those in air,since helium has a higher thermal conductivity than does air.

Miscellaneous

The complete disclosures of all references cited in this specificationare hereby incorporated by reference. In the event of an otherwiseirreconcilable conflict, however, the present specification shallcontrol. Also incorporated by reference are the entire texts of thefollowing references, none of which is prior art to the presentinvention: M. Feldman, “Thermal Compensation of X-ray Mask Distortions,”Poster presented at the 43rd International Conference on Electron, Ionand Photo Beam Technology and Nanofabrication (Marco Island, Fla., Jun.1-4, 1999); M. Feldman et al., “Thermal Compensation of X-ray MaskDistortions,” Abstract of Poster presented at the 43rd InternationalConference on Electron, Ion and Photo Beam Technology andNanofabrication (Marco Island, Fla., Jun. 1-4, 1999); K. Murooka et al.,“Membrane-mask distortion correction: analytical and experimentalresults,” paper to be presented at the International Conference onElectron, Ion, and Photo Beam Technology and Nanofabrication (PalmSprings, Calif., May 30 to Jun. 2, 2000); M. Feldman, “ThermalCompensation of X-ray Mask Distortions,” J. Vac. Sci. Technol. B, vol.17, pp.3407-3410 (1999); and (unpublished) pending proposal to DARPA BAA00-4 (prepared Feb. 8, 2000).

What is claimed:
 1. A method to compensate for distortion in thelithographic patterning of a wafer by irradiation of the wafer through amembrane mask, said method comprising: illuminating the mask with light;wherein: the location and intensity of said illuminating lightdifferentially heat the mask, to cause displacements within the mask,wherein the displacements compensate for distortion that would occur inthe patterning in the absence of said illuminating and the consequentdifferential heating.
 2. A method as recited in claim 1, wherein saidirradiation comprises X-ray radiation.
 3. A method as recited in claim1, wherein said irradiation comprises ultraviolet light.
 4. A method asrecited in claim 1, wherein said irradiation comprises deep ultravioletlight.
 5. A method as recited in claim 1, wherein said irradiationcomprises visible light.
 6. A method as recited in claim 1, wherein saidirradiation comprises electrons.
 7. A method as recited in claim 1,wherein said irradiation comprises ions.
 8. A method as recited in claim1, wherein said illuminating comprises illuminating with a modulatedlaser beam.
 9. A method as recited in claim 1, wherein said illuminatingcomprises illuminating with light reflected from a micro-mirror array.10. A method as recited in claim 1, wherein said illuminating comprisesilluminating with light through a transparency, wherein thetransmissivity of the transparency varies to cause the location andintensity of the transmitted light to vary to differentially heat themask to compensate for the distortion.
 11. A method as recited in claim1, additionally comprising steps (a), (b), and (c), prior to conductingthe steps recited in claim 1; and additionally comprising step (d),conducted during the steps recited in claim 1: (a) patterning asend-ahead wafer substantially identically to the patterning as recitedin claim 1, but omitting the light illuminating step; (b) developing thepattern in the send-ahead wafer; (c) measuring distortion in thedeveloped pattern in the send-ahead wafer; and (d) causing the locationand intensity of said illuminating to differentially heat the mask whileexposing a subsequent wafer to compensate for the distortion as measuredin the developed pattern of the send-ahead wafer.
 12. A method asrecited in claim 1, additionally comprising step (a), prior to theconducting the steps recited in claim 1; and additionally comprisingstep (b), conducted during the steps recited in claim 1: (a) measuringdistortion in the mask; and (b) causing the location and intensity ofsaid illuminating to differentially heat the mask to compensate for thedistortion measured in the mask.
 13. A method as recited in claim 1,additionally comprising step (a), prior to the conducting the stepsrecited in claim 1; and additionally comprising step (b), conductedduring the steps recited in claim 1: (a) measuring distortion in thewafer; and (b) causing the location and intensity of said illuminatingto differentially heat the mask to compensate for the distortionmeasured in the wafer.
 14. A method as recited in claim 1, additionallycomprising steps (a) and (b), prior to the conducting the steps recitedin claim 1; and additionally comprising step (c), conducted during thesteps recited in claim 1: (a) measuring distortion in the mask; (b)measuring distortion in the wafer; and (c) causing the location andintensity of said illuminating to differentially heat the mask tocompensate for the distortion measured in the mask and the wafer.